標題: Contact Engineering of Trilayer Black Phosphorus With Scandium and Gold
作者: Tsai, Yi-Chia
Magyari-Kope, Blanka
Li, Yiming
Samukawa, Seiji
Nishi, Yoshio
Sze, Simon M.
交大名義發表
電子工程學系及電子研究所
電機工程學系
National Chiao Tung University
Department of Electronics Engineering and Institute of Electronics
Department of Electrical and Computer Engineering
關鍵字: Black phosphorus;contact;scandium;gold;multilayer;first-principles calculation;DFT;electron injection
公開日期: 1-Jan-2019
摘要: High contact resistance keeps black phosphorus (BP) from fully wielding its excellent material property. Using first-principles calculations, we analyze the interfacial binding behavior and the impact of binding on the other layers of a trilayer BP. We found that the interfacial charge density and charge transfer of Scandium (Sc)-contacted trilayer BP are 2.67 and 3.29 times greater than Au-contacted trilayer BP, respectively. Moreover, the interfacial tunneling barrier height and width of Sc-contacted trilayer BP are 0 eV and 1.851 angstrom, which are significantly smaller than that of 5.1 eV and 2.447 angstrom observed in Au-contacted trilayer BP. All these facts suggest a strong bonding and efficient carrier transmission between Sc contact and trilayer BP substrate. Therefore, we conclude that the Sc electrode can lead to a superior performance that is consistent with the experiment.
URI: http://dx.doi.org/10.1109/JEDS.2019.2897167
http://hdl.handle.net/11536/148992
ISSN: 2168-6734
DOI: 10.1109/JEDS.2019.2897167
期刊: IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY
Volume: 7
起始頁: 322
結束頁: 328
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