標題: | Contact Engineering of Trilayer Black Phosphorus With Scandium and Gold |
作者: | Tsai, Yi-Chia Magyari-Kope, Blanka Li, Yiming Samukawa, Seiji Nishi, Yoshio Sze, Simon M. 交大名義發表 電子工程學系及電子研究所 電機工程學系 National Chiao Tung University Department of Electronics Engineering and Institute of Electronics Department of Electrical and Computer Engineering |
關鍵字: | Black phosphorus;contact;scandium;gold;multilayer;first-principles calculation;DFT;electron injection |
公開日期: | 1-一月-2019 |
摘要: | High contact resistance keeps black phosphorus (BP) from fully wielding its excellent material property. Using first-principles calculations, we analyze the interfacial binding behavior and the impact of binding on the other layers of a trilayer BP. We found that the interfacial charge density and charge transfer of Scandium (Sc)-contacted trilayer BP are 2.67 and 3.29 times greater than Au-contacted trilayer BP, respectively. Moreover, the interfacial tunneling barrier height and width of Sc-contacted trilayer BP are 0 eV and 1.851 angstrom, which are significantly smaller than that of 5.1 eV and 2.447 angstrom observed in Au-contacted trilayer BP. All these facts suggest a strong bonding and efficient carrier transmission between Sc contact and trilayer BP substrate. Therefore, we conclude that the Sc electrode can lead to a superior performance that is consistent with the experiment. |
URI: | http://dx.doi.org/10.1109/JEDS.2019.2897167 http://hdl.handle.net/11536/148992 |
ISSN: | 2168-6734 |
DOI: | 10.1109/JEDS.2019.2897167 |
期刊: | IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY |
Volume: | 7 |
起始頁: | 322 |
結束頁: | 328 |
顯示於類別: | 期刊論文 |