標題: Comment on 'Electron-phonon scattering in Sn-doped In2O3 FET nanowires probed by temperature-dependent measurements'
作者: Lin, Juhn-Jong
Wu, Chih-Yuan
電子物理學系
物理研究所
Department of Electrophysics
Institute of Physics
公開日期: 18-Nov-2009
摘要: We point out that the recently reported electrical quantities and transport behavior in a Sn-doped indium oxide FET nanowire (Berengue et al 2009 Nanotechnology 20 245706) should require serious reevaluation.
URI: http://dx.doi.org/10.1088/0957-4484/20/46/468001
http://hdl.handle.net/11536/149846
ISSN: 0957-4484
DOI: 10.1088/0957-4484/20/46/468001
期刊: NANOTECHNOLOGY
Volume: 20
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