Comment on 'Electron-phonon scattering in Sn-doped In2O3 FET nanowires probed by temperature-dependent measurements'

doi:10.1088/0957-4484/20/46/468001

標題:	Comment on 'Electron-phonon scattering in Sn-doped In2O3 FET nanowires probed by temperature-dependent measurements'
作者:	Lin, Juhn-Jong Wu, Chih-Yuan 電子物理學系物理研究所 Department of Electrophysics Institute of Physics
公開日期:	18-Nov-2009
摘要:	We point out that the recently reported electrical quantities and transport behavior in a Sn-doped indium oxide FET nanowire (Berengue et al 2009 Nanotechnology 20 245706) should require serious reevaluation.
URI:	http://dx.doi.org/10.1088/0957-4484/20/46/468001 http://hdl.handle.net/11536/149846
ISSN:	0957-4484
DOI:	10.1088/0957-4484/20/46/468001
期刊:	NANOTECHNOLOGY
Volume:	20
Appears in Collections:	Articles