標題: | A study on low temperature transport properties of independent double-gated poly-Si nanowire transistors |
作者: | Chen, Wei-Chen Lin, Horng-Chih Lin, Zer-Ming Hsu, Chin-Tsai Huang, Tiao-Yuan 電子工程學系及電子研究所 Department of Electronics Engineering and Institute of Electronics |
公開日期: | 29-十月-2010 |
摘要: | Employing mix-and-match lithography of I-line stepper and e-beam direct writing, independent double-gated poly-Si nanowire thin film transistors with channel lengths ranging from 70 nm to 5 mu m were fabricated and characterized. Electrical measurements performed under cryogenic ambient displayed intriguing characteristics in terms of length dependent abrupt switching behavior for one of the single-gated modes. Through simulation and experimental verification, the root cause for this phenomenon was identified to be the non-uniformly distributed dopants introduced by ion implantation. |
URI: | http://dx.doi.org/10.1088/0957-4484/21/43/435201 http://hdl.handle.net/11536/150057 |
ISSN: | 0957-4484 |
DOI: | 10.1088/0957-4484/21/43/435201 |
期刊: | NANOTECHNOLOGY |
Volume: | 21 |
顯示於類別: | 期刊論文 |