標題: A study on low temperature transport properties of independent double-gated poly-Si nanowire transistors
作者: Chen, Wei-Chen
Lin, Horng-Chih
Lin, Zer-Ming
Hsu, Chin-Tsai
Huang, Tiao-Yuan
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
公開日期: 29-Oct-2010
摘要: Employing mix-and-match lithography of I-line stepper and e-beam direct writing, independent double-gated poly-Si nanowire thin film transistors with channel lengths ranging from 70 nm to 5 mu m were fabricated and characterized. Electrical measurements performed under cryogenic ambient displayed intriguing characteristics in terms of length dependent abrupt switching behavior for one of the single-gated modes. Through simulation and experimental verification, the root cause for this phenomenon was identified to be the non-uniformly distributed dopants introduced by ion implantation.
URI: http://dx.doi.org/10.1088/0957-4484/21/43/435201
http://hdl.handle.net/11536/150057
ISSN: 0957-4484
DOI: 10.1088/0957-4484/21/43/435201
期刊: NANOTECHNOLOGY
Volume: 21
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