| 標題: | Gate-First TaN/La2O3/SiO2/Ge n-MOSFETs Using Laser Annealing |
| 作者: | Chen, W. B. Wu, C. H. Shie, B. S. Chin, Albert 電子工程學系及電子研究所 Department of Electronics Engineering and Institute of Electronics |
| 關鍵字: | Ge;high-kappa gate dielectric;laser annealing |
| 公開日期: | 1-Nov-2010 |
| 摘要: | To improve device performance, laser annealing was applied to Ge n-MOSFETs, which gave a low sheet resistance of 68 Omega/sq, a small ideality factor of 1.3, and a large similar to 10(5) forward\reverse current in the source-drain n(+)/p junction. The laser-annealed gate-first TaN/La2O3/SiO2/Ge n-MOSFETs showed a high mobility of 603 cm(2)/Vs and a good mobility of 304 cm(2)/Vs at a 1.9-nm equivalent oxide thickness. |
| URI: | http://dx.doi.org/10.1109/LED.2010.2063692 http://hdl.handle.net/11536/150112 |
| ISSN: | 0741-3106 |
| DOI: | 10.1109/LED.2010.2063692 |
| 期刊: | IEEE ELECTRON DEVICE LETTERS |
| Volume: | 31 |
| 起始頁: | 1184 |
| 結束頁: | 1186 |
| Appears in Collections: | Articles |
- Higher Gate Capacitance Ge n-MOSFETs Using Laser Annealing / Chen, W. B.;Shie, B. S.;Chin, Albert
- Metal-Gate/High-kappa/Ge nMOS at Small CET With Higher Mobility Than SiO2/Si at Wide Range Carrier Densities / Liao, C. C.;Ku, T. C.;Lin, M. H.;Zeng, Lang;Kang, Jinfeng
- Gate-First TaN/La(2)O(3)/SiO(2)/Ge n-MOSFETs Using Laser Annealing / Chen, W. B.;Wu, C. H.;Shie, B. S.;Chin, Albert
- High Performance of Ge nMOSFETs Using SiO2 Interfacial Layer and TiLaO Gate Dielectric / Chen, W. B.;Chin, Albert
- Higher kappa Metal-Gate/High-kappa/Ge n-MOSFETs with < 1 nm EOT Using Laser Annealing / Chen, W. B.;Shie, B. S.;Chin, Albert;Hsu, K. C.;Chi, C. C.
- Ge technology beyond Si CMOS / Chin, Albert
- High-Performance Gate-First Epitaxial Ge n-MOSFETs on Si With LaAlO3 Gate Dielectrics / Chen, W. B.;Cheng, C. H.;Chin, Albert
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