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dc.contributor.authorCheng, C. H.en_US
dc.contributor.authorChin, Alberten_US
dc.contributor.authorYeh, F. S.en_US
dc.date.accessioned2019-04-02T05:59:55Z-
dc.date.available2019-04-02T05:59:55Z-
dc.date.issued2011-01-31en_US
dc.identifier.issn0003-6951en_US
dc.identifier.urihttp://dx.doi.org/10.1063/1.3549689en_US
dc.identifier.urihttp://hdl.handle.net/11536/150240-
dc.description.abstractWe report a high performance and low-power operated resistive memory. Using stacked covalent-bond-dielectric GeOx on metal-oxide SrTiOx to form the cost-effective Ni/GeOx/SrTiOx/TaN resistive random access memory, ultralow set power of small 1 mu W (0.9 mu A at 1.2 V), reset power of 13 pW (0.13 nA at 0.1 V), fast 50 ns switching time and good 10(6) cycling endurance are realized. (C) 2011 American Institute of Physics. [doi:10.1063/1.3549689]en_US
dc.language.isoen_USen_US
dc.titleStacked GeO/SrTiOx Resistive Memory with Ultralow Resistance Currentsen_US
dc.typeArticleen_US
dc.identifier.doi10.1063/1.3549689en_US
dc.identifier.journalAPPLIED PHYSICS LETTERSen_US
dc.citation.volume98en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:000286988400052en_US
dc.citation.woscount27en_US
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