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dc.contributor.authorIslamov, D. R.en_US
dc.contributor.authorGritsenko, V. A.en_US
dc.contributor.authorCheng, C. H.en_US
dc.contributor.authorChin, A.en_US
dc.date.accessioned2019-04-02T05:58:57Z-
dc.date.available2019-04-02T05:58:57Z-
dc.date.issued2011-08-15en_US
dc.identifier.issn0003-6951en_US
dc.identifier.urihttp://dx.doi.org/10.1063/1.3626599en_US
dc.identifier.urihttp://hdl.handle.net/11536/150355-
dc.description.abstractThis study calculates the contribution of electrons and holes to HfO2 conductivity in Si/HfO2/Ni structures using experiments on injection of minority carriers from n- and p-type silicon. Results show that electrons and holes contribute to the conductivity of HfO2, allowing HfO2 to exhibit two-band conductivity. (C) 2011 American Institute of Physics. [doi:10.1063/1.3626599]en_US
dc.language.isoen_USen_US
dc.titleBipolar conductivity in amorphous HfO2en_US
dc.typeArticleen_US
dc.identifier.doi10.1063/1.3626599en_US
dc.identifier.journalAPPLIED PHYSICS LETTERSen_US
dc.citation.volume99en_US
dc.contributor.department交大名義發表zh_TW
dc.contributor.departmentNational Chiao Tung Universityen_US
dc.identifier.wosnumberWOS:000294208900026en_US
dc.citation.woscount10en_US
Appears in Collections:Articles