Full metadata record
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Islamov, D. R. | en_US |
dc.contributor.author | Gritsenko, V. A. | en_US |
dc.contributor.author | Cheng, C. H. | en_US |
dc.contributor.author | Chin, A. | en_US |
dc.date.accessioned | 2019-04-02T05:58:57Z | - |
dc.date.available | 2019-04-02T05:58:57Z | - |
dc.date.issued | 2011-08-15 | en_US |
dc.identifier.issn | 0003-6951 | en_US |
dc.identifier.uri | http://dx.doi.org/10.1063/1.3626599 | en_US |
dc.identifier.uri | http://hdl.handle.net/11536/150355 | - |
dc.description.abstract | This study calculates the contribution of electrons and holes to HfO2 conductivity in Si/HfO2/Ni structures using experiments on injection of minority carriers from n- and p-type silicon. Results show that electrons and holes contribute to the conductivity of HfO2, allowing HfO2 to exhibit two-band conductivity. (C) 2011 American Institute of Physics. [doi:10.1063/1.3626599] | en_US |
dc.language.iso | en_US | en_US |
dc.title | Bipolar conductivity in amorphous HfO2 | en_US |
dc.type | Article | en_US |
dc.identifier.doi | 10.1063/1.3626599 | en_US |
dc.identifier.journal | APPLIED PHYSICS LETTERS | en_US |
dc.citation.volume | 99 | en_US |
dc.contributor.department | 交大名義發表 | zh_TW |
dc.contributor.department | National Chiao Tung University | en_US |
dc.identifier.wosnumber | WOS:000294208900026 | en_US |
dc.citation.woscount | 10 | en_US |
Appears in Collections: | Articles |