High-Performance GaN MOSFET With High-k LaAlO3/SiO2 Gate Dielectric

Abstract

Using a high-k LaAlO3/SiO2 gate dielectric, the recessed-gate GaN MOSFET has a low threshold voltage (V-t) of 0.1 V, low on-resistance (R-on) of 13.5 Omega . mm, high breakdown voltage of 385 V, high transconductance (g(m)) of 136 mS/mm, and record-best normalized drive current (mu C-ox) of 172 mu A/V-2. Such excellent device integrity is due to the small capacitance equivalent thickness of 3.0 nm, using a high-k gate dielectric and recessed-gate etching.