標題: High-Performance GaN MOSFET With High-k LaAlO3/SiO2 Gate Dielectric
作者: Tsai, C. Y.
Wu, T. L.
Chin, Albert
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
關鍵字: GaN;high k;LaAlO3;MOSFET
公開日期: 1-Jan-2012
摘要: Using a high-k LaAlO3/SiO2 gate dielectric, the recessed-gate GaN MOSFET has a low threshold voltage (V-t) of 0.1 V, low on-resistance (R-on) of 13.5 Omega . mm, high breakdown voltage of 385 V, high transconductance (g(m)) of 136 mS/mm, and record-best normalized drive current (mu C-ox) of 172 mu A/V-2. Such excellent device integrity is due to the small capacitance equivalent thickness of 3.0 nm, using a high-k gate dielectric and recessed-gate etching.
URI: http://dx.doi.org/10.1109/LED.2011.2172911
http://hdl.handle.net/11536/150429
ISSN: 0741-3106
DOI: 10.1109/LED.2011.2172911
期刊: IEEE ELECTRON DEVICE LETTERS
Volume: 33
起始頁: 35
結束頁: 37
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