標題: Active device under bond pad to save I/O layout for high-pin-count SOC
作者: Ker, MD
Peng, JJ
Jiang, HC
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
公開日期: 1-一月-2003
摘要: To save layout area for electrostatic discharge (ESD) protection design in the SOC era, test chip with large size NMOS devices placed under bond pads has been fabricated in 0.35-mum one-poly-four-metal (1P4M) 3.3V CMOS process for verification. The bond pads had been drawn with different layout patterns on the inter-layer metals to investigate the effect of bonding stress on the active devices under the pads. Threshold voltage, off-state drain current, and gate leakage current of these devices under bond pads have been measured. After assembled in wire bond package, the measurement results show that there are only little variations between devices under bond pads and devices beside bond pads. This result can be applied on saving layout area for on-chip ESD protection devices or I/O devices of IC products, especially for the high-pin-count system-on-a-chip (SOC).
URI: http://hdl.handle.net/11536/150569
期刊: 4TH INTERNATIONAL SYMPOSIUM ON QUALITY ELECTRONIC DESIGN, PROCEEDINGS
起始頁: 241
結束頁: 246
顯示於類別:會議論文