標題: Test structure and verification on the MOSFET under bond pad for area-efficient I/O layout in high-pin-count SOCIC's
作者: Ker, MD
Peng, JJ
Jiang, HC
電機學院
College of Electrical and Computer Engineering
公開日期: 2003
摘要: For saving the layout area of I/O cells in SOC chips, a test chip with large size NMOS devices placed under bond pads has been fabricated in 0.35-mum 1P4M 3.3V CMOS process for verification. The bond pads had been drawn with different layout patterns on the inter-layer metals to investigate the impact of bonding stress on the active devices under the pads. The measurement results, including thermal shock and temperature cycling tests, show that there are only little variations between devices under bond pads and devices beside bond pads. This discovery can be applied to save layout area for on-chip ESD protection devices or I/O devices of IC products, especially for the high-pin-count SOC IC's.
URI: http://hdl.handle.net/11536/18613
ISBN: 0-7803-7653-6
期刊: ICMTS 2003: PROCEEDINGS OF THE 2003 INTERNATIONAL CONFERENCE ON MICROELECTRONIC TEST STRUCTURES
起始頁: 161
結束頁: 166
顯示於類別:會議論文