標題: Growth and Crystal Structure Investigation of Self-catalyst InAs/GaSb Heterostructure Nanowires on Si substrate
作者: Kakkerla, Ramesh Kumar
Hsiao, Chih-Jen
Anandan, Deepak
Singh, Sankalp Kumar
Chang, Edward Yi
材料科學與工程學系
Department of Materials Science and Engineering
公開日期: 1-Jan-2017
摘要: We demonstrate the self-catalyst (SC) growth of vertically aligned InAs and InAs/GaSb heterostructure nanowires on Si(111) substrate by Metal Organic Chemical Vapor Deposition (MOCVD). The effect of growth temperature on morphology and growth rate for SC InAs and InAs/GaSb heterostructure nanowires (NWs) were investigated. Scanning Electron Microscope (SEM) and Transmission Electron Microscope (TEM) measurements revealed the morphology and shell thickness can be tuned by the growth temperature. Electron microscopy also shows the formation of GaSb both in radial and axial directions outside the SC InAs NW core at certain growth temperatures. Crystal structure of InAs/GaSb heterostructure nanowires was also discussed. These results show that the control over SC InAs NWs growth, the GaSb shell thickness and it's crystal quality was achieved which is essential for future nano electronic devices such as TFET.
URI: http://hdl.handle.net/11536/150875
ISSN: 2378-377X
期刊: 2017 IEEE 12TH NANOTECHNOLOGY MATERIALS AND DEVICES CONFERENCE (NMDC)
起始頁: 133
結束頁: 134
Appears in Collections:Conferences Paper