標題: | Three dimensional integration of ReRAMs |
作者: | Hudec, Boris Chang, Che-Chia Wang, I-Ting Frohlich, Karol Hou, Tuo-Hung 電子工程學系及電子研究所 Department of Electronics Engineering and Institute of Electronics |
公開日期: | 1-一月-2018 |
摘要: | Storage-class memory, non-volatile, ultra-dense and lightning fast, may enable memory-driven computing to revolutionize the current architectures leading to an on-chip processing of vast amount of data. 3D vertical resistive random access memory (ReRAM) is a hot candidate for storage-class memory. In this talk we review current state-of-the-art works which offer promising solutions, utilizing either filamentary or non-filamentary ReRAM designs, including our own. We will discuss the pros and cons of different approaches and summarize the open problems, drawing possible solutions. |
URI: | http://hdl.handle.net/11536/151045 |
ISSN: | 1944-9399 |
期刊: | 2018 IEEE 18TH INTERNATIONAL CONFERENCE ON NANOTECHNOLOGY (IEEE-NANO) |
顯示於類別: | 會議論文 |