標題: Three dimensional integration of ReRAMs
作者: Hudec, Boris
Chang, Che-Chia
Wang, I-Ting
Frohlich, Karol
Hou, Tuo-Hung
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
公開日期: 1-Jan-2018
摘要: Storage-class memory, non-volatile, ultra-dense and lightning fast, may enable memory-driven computing to revolutionize the current architectures leading to an on-chip processing of vast amount of data. 3D vertical resistive random access memory (ReRAM) is a hot candidate for storage-class memory. In this talk we review current state-of-the-art works which offer promising solutions, utilizing either filamentary or non-filamentary ReRAM designs, including our own. We will discuss the pros and cons of different approaches and summarize the open problems, drawing possible solutions.
URI: http://hdl.handle.net/11536/151045
ISSN: 1944-9399
期刊: 2018 IEEE 18TH INTERNATIONAL CONFERENCE ON NANOTECHNOLOGY (IEEE-NANO)
Appears in Collections:Conferences Paper