標題: Interface Engineering of Ferroelectric Negative Capacitance FET for Hysteresis-Free Switch and Reliability Improvement
作者: Fan, Chia-Chi
Tu, Chun-Yuan
Lin, Ming-Huei
Chang, Chun-Yen
Cheng, Chun-Hu
Chen, Yen Liang
Liou, Guan-Lin
Liu, Chien
Chou, Wu-Ching
Hsu, Hsiao-Hsuan
交大名義發表
電子物理學系
電子工程學系及電子研究所
National Chiao Tung University
Department of Electrophysics
Department of Electronics Engineering and Institute of Electronics
關鍵字: Ferroelectric;HfAlOx;Negative Capacitance
公開日期: 1-Jan-2018
摘要: In this work, we successfully achieve a hysteresis-free negative capacitance field effect transistors (NCFETs) by exploiting a defect passivation scheme. This research work simultaneously provides a new insight into the gate-oxide stress reliability of NCFET. The fluorine-passivated HfAlOx NCFET shows the excellent transistor characteristics including a steep subthreshold swing of sub-30-mV/dec, a negligible hysteresis-free switch of similar to 10mV and a large on/off current reatio (I-on/I-off) of >10(7). Most importantly, fluorine passivation for NC HfAlOx effectively suppress the generation of shallow traps during electrical stress test. Besides, it is favorable to maintain NC operation and SILC immunity by in-situ fluorine passivation, which has been verified by transient pulse I-V measurement.
URI: http://hdl.handle.net/11536/152443
ISBN: 978-1-5386-5479-8
ISSN: 1541-7026
期刊: 2018 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM (IRPS)
起始頁: 0
結束頁: 0
Appears in Collections:Conferences Paper