標題: | Growth and Characteristics of a-Plane GaN on ZnO Heterostructure |
作者: | Huang, Huei-Min Kuo, Chin-Chia Chang, Chiao-Yun Lin, Yuan-Ting Lu, Tien-Chang Tu, Li-Wei Hsieh, Wen-Feng 光電工程學系 Department of Photonics |
公開日期: | 2012 |
摘要: | We report on growth and characteristics of a-plane GaN/ZnO/GaN epitaxial structures, which can be applied to various optoelectronic devices. The unique optical transitions intrinsic to heterovalent interfaces were found and analyzed. Clear carrier localization effect in the GaN/ZnO heterointerface is observed from the S-shaped energy shift with increasing temperature in the temperature-dependent photoluminescence measurement. The carrier localization also results in strong luminescent intensity and dominates the emission spectrum at room temperature. In addition, the acceptor level originated from the Zn out-diffusion from the ZnO layer is observed in the low temperature photoluminescence spectra, and its binding energy is estimated to be about 0.311 eV. (C) 2012 The Electrochemical Society. [DOI: 10.1149/2.080203jes] All rights reserved. |
URI: | http://hdl.handle.net/11536/15299 http://dx.doi.org/10.1149/2.080203jes |
ISSN: | 0013-4651 |
DOI: | 10.1149/2.080203jes |
期刊: | JOURNAL OF THE ELECTROCHEMICAL SOCIETY |
Volume: | 159 |
Issue: | 3 |
起始頁: | H290 |
結束頁: | H292 |
顯示於類別: | 期刊論文 |