標題: Substrate-induced strain in 2D layered GaSe materials grown by molecular beam epitaxy
作者: Liu, Cheng-Wei
Dai, Jin-Ji
Wu, Ssu-Kuan
Nhu-Quynh Diep
Sa-Hoang Huynh
Mai, Thi-Thu
Wen, Hua-Chiang
Yuan, Chi-Tsu
Chou, Wu-Ching
Shen, Ji-Lin
Huy-Hoang Luc
電子物理學系
Department of Electrophysics
公開日期: 31-七月-2020
摘要: Two-dimensional (2D) layered GaSe films were grown on GaAs (001), GaN/Sapphire, and Mica substrates by molecular beam epitaxy (MBE). The in situ reflective high-energy electron diffraction monitoring reveals randomly in-plane orientations of nucleated GaSe layers grown on hexagonal GaN/Sapphire and Mica substrates, whereas single-orientation GaSe domain is predominant in the GaSe/GaAs (001) sample. Strong red-shifts in the frequency of in-plane E2g2 vibration modes and bound exciton emissions observed from Raman scattering and photoluminescence spectra in all samples are attributed to the unintentionally biaxial in-plane tensile strains, induced by the dissimilarity of symmetrical surface structure between the 2D-GaSe layers and the substrates during the epitaxial growth. The results in this study provide an important understanding of the MBE-growth process of 2D-GaSe on 2D/3D hybrid-heterostructures and pave the way in strain engineering and optical manipulation of 2D layered GaSe materials for novel optoelectronic integrated technologies.
URI: http://dx.doi.org/10.1038/s41598-020-69946-4
http://hdl.handle.net/11536/155091
ISSN: 2045-2322
DOI: 10.1038/s41598-020-69946-4
期刊: SCIENTIFIC REPORTS
Volume: 10
Issue: 1
起始頁: 0
結束頁: 0
顯示於類別:期刊論文