A 94 GHz 10.8 mW Low-Noise Amplifier With Inductive Gain Boosting in 40 nm Digital CMOS Technology

Abstract

A W-band low-power, low-noise amplifier is designed and fabricated in 40 nm digital CMOS technology. The method of inductive gain boosting is utilized without extra power consumption. The circuit only consumes 10.8 mW dc power with a supply voltage of 1 V. The measured peak power gain achieves 14.5 dB at 93 GHz, while the minimum noise figure is 6.4 dB at 89 GHz. The circuit occupies a core area of only 0.07 mm(2).