標題: | Embedded I/O PAD Circuit Design for OTP Memory Power-Switch Functionality |
作者: | Huang, Shao-Chang Chen, Ke-Horng Lin, Wei-Yao Lee, Zon-Lon Chang, Kun-Wei Hsu, Erica Lee, Wenson Chen, Lin-Fwu Lu, Chris 電控工程研究所 Institute of Electrical and Control Engineering |
關鍵字: | Electrostatic discharge (ESD);Neobit;one-time programming (OTP) |
公開日期: | 1-四月-2012 |
摘要: | An additional high-voltage pad is generally applied for one-time-programming (OTP) memory product applications. This may increase the complexity of input/output (I/O) pad arrangement and the area penalty. In this paper, a novel approach of I/O circuit embedded with the power-switch function is proposed for multifunction integrations in one I/O pad. The capabilities of high-voltage programming, I/O signal handling, electrostatic discharge protection and latch-up prevention for this novel circuit are well examined from silicon verifications. |
URI: | http://dx.doi.org/10.1109/TVLSI.2011.2106808 http://hdl.handle.net/11536/15776 |
ISSN: | 1063-8210 |
DOI: | 10.1109/TVLSI.2011.2106808 |
期刊: | IEEE TRANSACTIONS ON VERY LARGE SCALE INTEGRATION (VLSI) SYSTEMS |
Volume: | 20 |
Issue: | 4 |
起始頁: | 746 |
結束頁: | 750 |
顯示於類別: | 期刊論文 |