標題: Wide bandwidth AlAs/AlGaAs tandem Bragg reflectors grown by organometallic vapor phase epitaxy
作者: Lee, WI
交大名義發表
電子物理學系
National Chiao Tung University
Department of Electrophysics
公開日期: 18-Dec-1995
摘要: Wide bandwidth AlAs/Al0.6Ga0.4As tandem Bragg reflectors were grown by organometallic vapor phase epitaxy. Quarter-wave reflector stacks designed for different wavelengths were placed in cascade in epitaxially grown structures to expand the high reflectance bands. Intermediate low-index layers were put in between every two stacks to suppress the transmission peaks in the centers of the combined high reflectance bands. While a single-stack structure showed a full width half-maximum bandwidth of 500 Angstrom, the two-stack and the three-stack structures effectively doubled and tripled this bandwidth to approximately 1000 and 1500 Angstrom, respectively. (C) 1995 American Institute of Physics.
URI: http://dx.doi.org/10.1063/1.115372
http://hdl.handle.net/11536/1593
ISSN: 0003-6951
DOI: 10.1063/1.115372
期刊: APPLIED PHYSICS LETTERS
Volume: 67
Issue: 25
起始頁: 3753
結束頁: 3755
Appears in Collections:Articles