標題: | Evidence for a Very Small Tunneling Effective Mass (0.03m(0)) in MOSFET High-k (HfSiON) Gate Dielectrics |
作者: | Chen, Ming-Jer Hsu, Chih-Yu 電子工程學系及電子研究所 Department of Electronics Engineering and Institute of Electronics |
關鍵字: | Effective mass;effective oxide thickness (EOT);HfO2;HfSiON;high-k;metal gate;MOSFETs;tunneling |
公開日期: | 1-四月-2012 |
摘要: | We have recently conducted experimental and modeling tasks on TaC/HfSiON/SiON n-type MOSFETs, leading to an effective mass of 0.03m(0) for 2-D electrons tunneling in high-k HfSiON dielectrics. In this letter, we present extra evidence obtained from complementary MOSFETs undergoing the same TaC/HfSiON/SiON processing, which shows that such a very small tunneling effective mass is existent not only for 3-D electrons but also for 2-D holes. This new finding is very important because it can substantially enhance the current understanding of gate tunneling leakage suppression in metal-gate high-k MOSFETs. |
URI: | http://hdl.handle.net/11536/16079 |
ISSN: | 0741-3106 |
期刊: | IEEE ELECTRON DEVICE LETTERS |
Volume: | 33 |
Issue: | 4 |
結束頁: | 468 |
顯示於類別: | 期刊論文 |