Achieving High Field-Effect Mobility in Amorphous Indium-Gallium-Zinc Oxide by Capping a Strong Reduction Layer

標題:	Achieving High Field-Effect Mobility in Amorphous Indium-Gallium-Zinc Oxide by Capping a Strong Reduction Layer
作者:	Zan, Hsiao-Wen Yeh, Chun-Cheng Meng, Hsin-Fei Tsai, Chuang-Chuang Chen, Liang-Hao 物理研究所光電工程學系 Institute of Physics Department of Photonics
關鍵字:	high mobility;oxide semiconductors;thin film transistors;defect reduction;oxygen deficiency
公開日期:	10-七月-2012
URI:	http://hdl.handle.net/11536/16435
ISSN:	0935-9648
期刊:	ADVANCED MATERIALS
Volume:	24
Issue:	26
結束頁:	3509
顯示於類別：	期刊論文

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