| 標題: | Achieving High Field-Effect Mobility in Amorphous Indium-Gallium-Zinc Oxide by Capping a Strong Reduction Layer |
| 作者: | Zan, Hsiao-Wen Yeh, Chun-Cheng Meng, Hsin-Fei Tsai, Chuang-Chuang Chen, Liang-Hao 物理研究所 光電工程學系 Institute of Physics Department of Photonics |
| 關鍵字: | high mobility;oxide semiconductors;thin film transistors;defect reduction;oxygen deficiency |
| 公開日期: | 10-Jul-2012 |
| URI: | http://hdl.handle.net/11536/16435 |
| ISSN: | 0935-9648 |
| 期刊: | ADVANCED MATERIALS |
| Volume: | 24 |
| Issue: | 26 |
| 結束頁: | 3509 |
| Appears in Collections: | Articles |
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- Gettering Effect Induced by Oxygen-Deficient Titanium Oxide in InZnO and InGaZnO Channel Systems for Low-Power Display Applications / Yen, Shiang-Shiou;Chiu, Yu-Chien;Cheng, Chun-Hu;Chen, Po-Chun;Yeh, Yu-Chen
- High Mobility Bilayer Metal-Oxide Thin Film Transistors Using Titanium-Doped InGaZnO / Hsu, Hsiao-Hsuan;Chang, Chun-Yen;Cheng, Chun-Hu;Chiou, Shan-Haw;Huang, Chiung-Hui
- Electrical characteristics of amorphous In-Ga-Zn-O thin-film transistors prepared by radio frequency magnetron sputtering with varying oxygen flows / Lee, Yih-Shing;Yen, Tung-Wei;Lin, Cheng-I;Lin, Horng-Chih;Yeh, Yun
- Investigating electron depletion effect in amorphous indium-gallium-zinc-oxide thin-film transistor with a floating capping metal by technology computer-aided design simulation and leakage reduction / Lu, Ting-Chou;Chen, Wei-Tsung;Zan, Hsiao-Wen;Ker, Ming-Dou
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