標題: Impacts of NBTI and PBTI on Power-Gated SRAM with High-k Metal-Gate Devices
作者: Yang, Hao-I
Chuang, Ching-Te
Hwang, Wei
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
公開日期: 2009
摘要: The threshold voltage (V(T)) drift induced by Negative Bias Temperature Instability (NBTI) weakens PFETs, while Positive Bias Temperature Instability (PBTI) weakens NFETs fabricated with high-k metal-gate, respectively. These long-term V(T) drifts degrade SRAM cell stability, margin and performance, and may lead to functional failure over the life of usage. Additionally, most state-of-the-art SRAMs are designed with power-gating structures to reduce leakage currents in Standby or Sleep mode, and the power switches suffer NBTI or PBTI stress/degradation as well. This paper presents a comprehensive analysis on the impacts of NBTI and PBTI on power-gated SRAM arrays with high-k metal-gate devices. NBTI/PBTI tolerant sense amplifier structures are also discussed.
URI: http://hdl.handle.net/11536/16500
ISBN: 978-1-4244-3827-3
期刊: ISCAS: 2009 IEEE INTERNATIONAL SYMPOSIUM ON CIRCUITS AND SYSTEMS, VOLS 1-5
起始頁: 377
結束頁: 380
Appears in Collections:Conferences Paper