標題: | Bipolar resistive switching characteristics of Al-doped zinc tin oxide for nonvolatile memory applications |
作者: | Fan, Yang-Shun Liu, Po-Tsun Teng, Li-Feng Hsu, Ching-Hui 光電工程學系 顯示科技研究所 Department of Photonics Institute of Display |
公開日期: | 1-Jan-1970 |
摘要: | "Resistive random access memory using Al-doped zinc tin oxide (AZTO) as resistive switching layer was prepared by radio-frequency magnetron sputtering at room temperature. The Ti/AZTO/Pt device exhibits reversible and robust bi-stable resistance switching behavior over hundreds of switching cycles within 2 V sweep voltage. The Ti/AZTO/Pt device showed stable retention characteristics for over 104 s under read disturb stress condition. Besides, the electrical conduction mechanism was dominated by ohmic conduction in low resistance state, while the current transport behavior followed a trap-controlled space-charge-limited conduction process in high resistance state. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4742737]" |
URI: | http://dx.doi.org/52901 http://hdl.handle.net/11536/16745 |
ISSN: | 0003-6951 |
DOI: | 52901 |
期刊: | APPLIED PHYSICS LETTERS |
Volume: | 101 |
Issue: | 5 |
結束頁: | |
Appears in Collections: | Articles |
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