標題: A Novel Double-gated Nanowire TFT and Investigation of Its Size Dependency
作者: Chen, Wei-Chen
Lin, Chuan-Ding
Lin, Horng-Chih
Huang, Tiao-Yuan
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
公開日期: 2009
摘要: A simple method for fabricating poly-Si nanowire (NW) TFT with multiple gates is proposed and characterized. In this structure, NW is formed mainly using both anisotropic and highly selective isotropic plasma etching. It is found that when the size of NW is scaled down, double-gated operation provides more improvement. Furthermore, by utilizing this unique independent double-gated Configuration, the function of threshold voltage modulation is investigated.
URI: http://hdl.handle.net/11536/16954
ISBN: 978-1-4244-2784-0
期刊: PROCEEDINGS OF TECHNICAL PROGRAM: 2009 INTERNATIONAL SYMPOSIUM ON VLSI TECHNOLOGY, SYSTEMS AND APPLICATIONS
起始頁: 121
結束頁: 122
顯示於類別:會議論文