Investigation of hot carrier degradation modes in LDMOS by using a novel three-region charge pumping technique

Abstract

Hot carrier stress induced oxide degradation in n-LDMOS is investigated by using a novel three-region charge pumping technique. This technique allows us to locate oxide damage area in various stress modes and gain insight into trap creation properties. Our characterization shows that a max. I(g) stress causes a largest drain current and subthreshold slope degradation because of both interface trap (N(it)) generation in the channel region and negative bulk oxide charge (Q(ox)) creation in the bird's beak region. The density of N(it) and Q(ox) can be separately extracted from the proposed charge pumping method. A numerical device simulation is performed to confirm our result.