A 40-nm-Gate InAs/In(0.7)Ga(0.3)As Composite-Channel HEMT with 2200 mS/mm and 500-GHz f(T)

Abstract

A 40-nm T-gate high-electron-mobility-transistor with InAs/In(0.7)Ga(0.3)As composite-channel has been fabricated. The device exhibits a transconductance (g.) of 2200 mS/mm, a cutoff frequency f(T) of 506 GHz and a minimum noise figure of 1.21 dB at a frequency of 58 GHz. These performances make the device well-suited for millimeter-wave or sub-millimeter-wave applications.