標題: | Investigation of Static Noise Margin of FinFET SRAM Cells in Sub-threshold Region |
作者: | Fan, Ming-Long Wu, Yu-Sheng Hu, Vita Pi-Ho Su, Pin Chuang, Ching-Te 電子工程學系及電子研究所 Department of Electronics Engineering and Institute of Electronics |
公開日期: | 2009 |
摘要: | This paper investigates the Static Noise Margin (SNM) of FinFET SRAM cells operating in sub-threshold region using analytical solution of 3D Poisson's equation. An analytical SNM model for sub-threshold FinFET SRAM is demonstrated and validated by TCAD mixed-mode simulations. The stabilities of several novel independently controlled-gate FinFET SRAM cells are examined. Significant nominal RSNM improvements are observed in these novel cells. However, Write-ability is degraded and becomes an important concern for certain configurations in sub-threshold region. Our result indicates that R/W word-line (WL) voltage control technique is more effective than transistor sizing for improving the Write-ability of the FinFET sub-threshold SRAM. While 6T cell is not a viable candidate for sub-threshold SRAM and 8T/10T cells must be used in bulk CMOS, our analysis establishes the feasibility and viability of 6T FinFET cells for sub-threshold SRAM applications. |
URI: | http://hdl.handle.net/11536/17735 |
ISBN: | 978-1-4244-4256-0 |
期刊: | 2009 IEEE INTERNATIONAL SOI CONFERENCE |
起始頁: | 29 |
結束頁: | 30 |
顯示於類別: | 會議論文 |