標題: Investigation of Static Noise Margin of FinFET SRAM Cells in Sub-threshold Region
作者: Fan, Ming-Long
Wu, Yu-Sheng
Hu, Vita Pi-Ho
Su, Pin
Chuang, Ching-Te
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
公開日期: 2009
摘要: This paper investigates the Static Noise Margin (SNM) of FinFET SRAM cells operating in sub-threshold region using analytical solution of 3D Poisson's equation. An analytical SNM model for sub-threshold FinFET SRAM is demonstrated and validated by TCAD mixed-mode simulations. The stabilities of several novel independently controlled-gate FinFET SRAM cells are examined. Significant nominal RSNM improvements are observed in these novel cells. However, Write-ability is degraded and becomes an important concern for certain configurations in sub-threshold region. Our result indicates that R/W word-line (WL) voltage control technique is more effective than transistor sizing for improving the Write-ability of the FinFET sub-threshold SRAM. While 6T cell is not a viable candidate for sub-threshold SRAM and 8T/10T cells must be used in bulk CMOS, our analysis establishes the feasibility and viability of 6T FinFET cells for sub-threshold SRAM applications.
URI: http://hdl.handle.net/11536/17735
ISBN: 978-1-4244-4256-0
期刊: 2009 IEEE INTERNATIONAL SOI CONFERENCE
起始頁: 29
結束頁: 30
Appears in Collections:Conferences Paper