Title: | Modeling RF MOSFETs after electrical stress using low-noise microstrip line layout |
Authors: | Kao, HL Chin, A Lai, JM Lee, CF Chiang, KC McAlister, SP 電子工程學系及電子研究所 Department of Electronics Engineering and Institute of Electronics |
Keywords: | NFmin;RF noise;lifetime;stress;model |
Issue Date: | 2005 |
Abstract: | A novel microstrip line layout is developed to direct measure the min. noise figure (NFmin) accurately instead of the complicated de-embedding procedure in conventional CPW line. Very low NFmin of 1.05 dB at 10 GHz is directly measured in 16 gate fingers 0.18 mu m MOSFETs without any de-embedding. Based on the accurate NFmin measurement, we have developed the self-consistent DC, S-parameters and NFmin model to predict device characteristics after the continuous stress with good accuracy. |
URI: | http://hdl.handle.net/11536/17813 |
ISBN: | 0-7803-8983-2 |
ISSN: | 1529-2517 |
Journal: | 2005 IEEE Radio Frequency Integrated Circuits (RFIC) Symposium, Digest of Papers |
Begin Page: | 157 |
End Page: | 160 |
Appears in Collections: | Conferences Paper |