標題: Different approaches for reliability enhancement of p-channel flash memory
作者: Chung, SS
Chen, YJ
Tsai, AW
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
公開日期: 2004
摘要: In this paper, we will demonstrate two different strategies for designing p-channel flash memories, for achieving better reliability, in particular data retention and drain-disturb. The first one is by using a gate-engineering approach and the other one is using a newly developed substrate bias enhanced Avalanche Hot Electron (ABE) injection programming scheme. For the former, a p-doped floating gate on both p-channel flash cells can be achieved with superior data retention characteristics as well as a 3-order improvement of the drain disturb. For the latter, it exhibits much higher speed and much lower voltage for programming, and very good drain disturb characteristics.
URI: http://hdl.handle.net/11536/18212
http://dx.doi.org/10.1109/RELPHY.2004.1315429
ISBN: 0-7803-8315-X
DOI: 10.1109/RELPHY.2004.1315429
期刊: 2004 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM PROCEEDINGS
起始頁: 641
結束頁: 642
Appears in Collections:Conferences Paper


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