Low RF loss and noise of transmission lines on Si substrates using an improved ion implantation process

Abstract

Very low power loss less than or equal to 0.6 dB at 110 GHz and noise of < 0.25 dB at 18 GHz have been measured on transmission lines fabricated on Si substrates and implanted with proton. In contrast, much worse power loss of 5 dB and higher noise of 2.5 dB were measured without implantation. This large improvement arises from the high resistivity by proton implantation, which was also done after forming the transmission lines and at a reduced energy of similar to 4 MeV for easier process integration into current VLSI technology.