標題: | 2.4 V-operated enhancement mode PHEMT with 32 dBm output power and 61 % power efficenciecy |
作者: | Chen, SH Chang, EY Lin, YC 材料科學與工程學系 Department of Materials Science and Engineering |
公開日期: | 2001 |
摘要: | A 2.4 V operated enhancement-mode pseudormorphic high electron mobility transistors (E-PHEMTs) with high output power and power-added-efficiency (PAE) have been developed. With optimally designed epitaxial structure and gate recess process, the E-PHEMT shows high power performance and high power gain. Under 2.4 V bias at 1.9 GHz, the E-PHEMT shows maximum output power of 32.25 dBm and maximum power-added efficiency of 61.45% with linear power gain of 13.93 dB when the device was tuned for maximum output power match. When tuned for maximum output power added efficiency, the E-PHEMT can achieve a maximum PAE of 78.51%. The developed E-PHEMT with superior power performance is one of the candidates for power amplifiers used for 2.4 V-operated 3G wireless communication system. |
URI: | http://hdl.handle.net/11536/18968 |
ISBN: | 0-7803-7138-0 |
期刊: | APMC 2001: ASIA-PACIFIC MICROWAVE CONFERENCE, VOLS 1-3, PROCEEDINGS |
起始頁: | 1291 |
結束頁: | 1294 |
顯示於類別: | 會議論文 |