Electrical reliability issues of integrating low-K dielectrics with Cu metallization

標題:	Electrical reliability issues of integrating low-K dielectrics with Cu metallization
作者:	Wu, ZC Shiung, ZW Wang, CC Fang, KL Wu, RG Liu, YL Tsui, BY Chen, MC Chang, W Chou, PF Jang, SM Yu, CH Liang, MS 電子工程學系及電子研究所 Department of Electronics Engineering and Institute of Electronics
公開日期:	2000
摘要:	Electrical reliability issues of two organic aromatic low-K materials (K = 2.6 similar to 2.8) were investigated. Both materials show acceptable thermal stability and good dielectric barrier property against Cu penetration. C-V curve instability was observed under bias-temperature stress (BTS) for the first time. It can be explained by the model of stress induced dielectric polarization charges. This instability may be an issue of long term stability of circuits.
URI:	http://hdl.handle.net/11536/19229 http://dx.doi.org/10.1109/IITC.2000.854289
ISBN:	0-7803-6327-2
DOI:	10.1109/IITC.2000.854289
期刊:	PROCEEDINGS OF THE IEEE 2000 INTERNATIONAL INTERCONNECT TECHNOLOGY CONFERENCE
起始頁:	82
結束頁:	84
顯示於類別：	會議論文

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