標題: Improved plasma charging immunity in ultra-thin gate oxide with fluorine and nitrogen implantation
作者: Chen, CC
Lin, HC
Chang, CY
Huang, CC
Chien, CH
Huang, TY
Liang, MS
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
公開日期: 2000
摘要: The effects of fluorine and nitrogen incorporation on ultra-thin gate oxide integrity (GOI) were investigated by implanting fluorine and nitrogen into poly gate or Si substrate. It is observed that fluorine and nitrogen implantation into Si substrate prior to oxidation can be used to obtain multiple oxide thickness, albeit its effectiveness is drastically reduced for N2O-nitrided oxide. Gate leakage measurements performed on antenna devices show that charging damage can be significantly reduced for fluorine- or nitrogen- implanted devices with O-2 oxide. On the other hand, fluorine-alone implant is useful to reduce the gate leakage of antenna devices with N2O oxide. Finally improved CMOS GOI, even for p-channel devices, is actually achieved for the first time with medium-dose fluorine implantation, without causing noticeably worsened boron penetration.
URI: http://hdl.handle.net/11536/19253
http://dx.doi.org/10.1109/PPID.2000.870634
ISBN: 0-9651577-4-1
DOI: 10.1109/PPID.2000.870634
期刊: 2000 5TH INTERNATIONAL SYMPOSIUM ON PLASMA PROCESS-INDUCED DAMAGE
起始頁: 121
結束頁: 124
Appears in Collections:Conferences Paper


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