An accurate hot carrier reliability monitor for deep-submicron shallow S/D junction thin gate oxide n-MOSFET's

Abstract

In this paper, an accurate criterion has been proposed for reliability evaluation of state-of-the-art deep-submicron S/D extension n-MOSFET's. A new monitor for HC reliability evaluation has been developed using total values of N-it in the effective channel length region, instead of commonly used substrate current(I-B), impact ionization rate (I-D/I-B), or peak/average N-it values. An accurate degradation model has thus been developed based on the N-it distribution and mobility scattering effect. Moreover, this approach has been successfully used to demonstrate the feasibility for gate-engineering studies.