标题: | Applying selective liquid-phase deposition to create contact holes in plasma damage-free process |
作者: | Yeh, CF Liu, CH 电子工程学系及电子研究所 Department of Electronics Engineering and Institute of Electronics |
公开日期: | 1998 |
摘要: | We apply an alternative plasma damage-free process -- the selective liquid-phase deposition (S-LPD), instead of the conventional RIE to form metal/semiconductor contact holes. This paper studies the performance comparison between S-LPD and RIE to form contact hole in n(+)/p junction diode, Schottky diode, and ohmic contact. In our experiments, if the plasma-free S-LPD technique is adopted, there is excelled performance including lower reverse current, lower ideality factor, higher forward current, high Schottky barrier, lower contact resistance and better thermal stability in these devices. |
URI: | http://hdl.handle.net/11536/19488 http://dx.doi.org/10.1109/PPID.1998.725614 |
ISBN: | 0-9651577-2-5 |
DOI: | 10.1109/PPID.1998.725614 |
期刊: | 1998 3RD INTERNATIONAL SYMPOSIUM ON PLASMA PROCESS-INDUCED DAMAGE |
起始页: | 223 |
结束页: | 226 |
显示于类别: | Conferences Paper |
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