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dc.contributor.authorYeh, CFen_US
dc.contributor.authorLee, YCen_US
dc.contributor.authorSu, JLen_US
dc.date.accessioned2014-12-08T15:27:34Z-
dc.date.available2014-12-08T15:27:34Z-
dc.date.issued1996en_US
dc.identifier.isbn0-8194-2277-0en_US
dc.identifier.urihttp://hdl.handle.net/11536/19813-
dc.language.isoen_USen_US
dc.subjectlow-stressen_US
dc.subjectliquid phase depositionen_US
dc.subjectLPDen_US
dc.subjectSiO2-xFxen_US
dc.subjectselective depositionen_US
dc.titleSelective SiO2-xFx growth with liquid-phase deposition for MEMS technologyen_US
dc.typeProceedings Paperen_US
dc.identifier.journalMICROMACHINING AND MICROFABRICATION PROCESS TECHNOLOGY IIen_US
dc.citation.volume2879en_US
dc.citation.spage260en_US
dc.citation.epage265en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:A1996BG41M00027-
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