标题: MICROCRYSTALLINE beta-SIC GROWTH ON SI BY ECR-CVD AT 500 degrees C
作者: CHENG, KL
LIU, CC
CHENG, HC
LEE, CY
YEW, TR
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
公开日期: 1995
URI: http://hdl.handle.net/11536/19967
ISBN: 1-55899-259-6
ISSN: 0272-9172
期刊: MICROCRYSTALLINE AND NANOCRYSTALLINE SEMICONDUCTORS
Volume: 358
起始页: 799
结束页: 803
显示于类别:Conferences Paper