完整後設資料紀錄
DC 欄位語言
dc.contributor.authorHuang, Zue-Deren_US
dc.contributor.authorWu, Chung-Yuen_US
dc.date.accessioned2014-12-08T15:28:42Z-
dc.date.available2014-12-08T15:28:42Z-
dc.date.issued2011-08-01en_US
dc.identifier.issn0916-8524en_US
dc.identifier.urihttp://dx.doi.org/10.1587/transele.E94.C.1289en_US
dc.identifier.urihttp://hdl.handle.net/11536/20760-
dc.description.abstractA 0.8-V CMOS Phase-Locked Loop (PLL) has been designed and fabricated by using a 0.13-mu m 1p8m CMOS process. In the proposed PLL, the double-positive-feedbacks voltage-controlled oscillator (DPF-VCO) is used to generate current signals for the coupling current-mode injection-locked frequency divider (CCMILFD) and current-injection current-mode logic (CICML) divider. A short-pulsed-reset phase frequency detector (SPR-PFD) with the reduced pulse width of reset signal to improve the linear range of the PFD and a complementary-type charge pump to eliminate the current path delay are also adopted in the proposed PLL. The measured in-band phase noise of the fabricated PLL is -98 dBc/Hz. The locking range of the PLL is from 22.6 GHz to 23.3 GHz and the reference spur level is -69 dBm that is 54 dB bellow the carrier. The power consumption is 9.2 mW under a 0.8-V power supply. The proposed PLL has the advantages of low phase noise, low reference spur, and low power dissipation at low voltage operation.en_US
dc.language.isoen_USen_US
dc.subjectphase-locked loop (PLL)en_US
dc.subjectVCOen_US
dc.subjectcoupling current-mode injection-locked frequency divider (CCMILFD)en_US
dc.subjectSPR-PFDen_US
dc.subjectcomplementary-type charge pumpen_US
dc.titleThe Design of a K-Band 0.8-V 9.2-mW Phase-Locked Loopen_US
dc.typeArticleen_US
dc.identifier.doi10.1587/transele.E94.C.1289en_US
dc.identifier.journalIEICE TRANSACTIONS ON ELECTRONICSen_US
dc.citation.volumeE94Cen_US
dc.citation.issue8en_US
dc.citation.spage1289en_US
dc.citation.epage1294en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:000293664100006-
dc.citation.woscount0-
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