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dc.contributor.authorLiu, Tao-Chien_US
dc.contributor.authorChen, Chihen_US
dc.contributor.authorChiu, Kuo-Jungen_US
dc.contributor.authorLin, Han-Wenen_US
dc.contributor.authorKuo, Jui-Chaoen_US
dc.date.accessioned2014-12-08T15:28:53Z-
dc.date.available2014-12-08T15:28:53Z-
dc.date.issued2012-12-01en_US
dc.identifier.issn1044-5803en_US
dc.identifier.urihttp://dx.doi.org/10.1016/j.matchar.2012.09.002en_US
dc.identifier.urihttp://hdl.handle.net/11536/20865-
dc.description.abstractWe proposed a novel technique developed from focused ion beam (FIB) polishing for sample preparation of electron backscatter diffraction (EBSD) measurement. A low-angle incident gallium ion beam with a high acceleration voltage of 30 kV was used to eliminate the surface roughness of cross-sectioned microbumps resulting from mechanical polishing. This work demonstrates the application of the FIB polishing technique to solders for a high-quality sample preparation for EBSD measurement after mechanical polishing. (C) 2012 Elsevier Inc. All rights reserved.en_US
dc.language.isoen_USen_US
dc.subjectFocused ion beam (FIB)en_US
dc.subjectIntermetallic compounden_US
dc.subjectSample preparationen_US
dc.subjectImage qualityen_US
dc.subjectElectron backscatter diffraction (EBSD)en_US
dc.titleNovel EBSD preparation method for Cu/Sn microbumps using a focused ion beamen_US
dc.typeArticleen_US
dc.identifier.doi10.1016/j.matchar.2012.09.002en_US
dc.identifier.journalMATERIALS CHARACTERIZATIONen_US
dc.citation.volume74en_US
dc.citation.issueen_US
dc.citation.spage42en_US
dc.citation.epage48en_US
dc.contributor.department材料科學與工程學系zh_TW
dc.contributor.departmentDepartment of Materials Science and Engineeringen_US
dc.identifier.wosnumberWOS:000311986400005-
dc.citation.woscount3-
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