HfO2 nanocrystal memory on SiGe channel

doi:10.1016/j.sse.2012.10.009

完整後設資料紀錄

DC 欄位	值	語言
dc.contributor.author	Lin, Yu-Hsien	en_US
dc.contributor.author	Chien, Chao-Hsin	en_US
dc.date.accessioned	2014-12-08T15:29:54Z	-
dc.date.available	2014-12-08T15:29:54Z	-
dc.date.issued	2013-02-01	en_US
dc.identifier.issn	0038-1101	en_US
dc.identifier.uri	http://dx.doi.org/10.1016/j.sse.2012.10.009	en_US
dc.identifier.uri	http://hdl.handle.net/11536/21443	-
dc.description.abstract	This study proposes a novel HfO2 nanocrystal memory on epi-SiGe (Ge: 15%) channel. Because SiGe has a smaller bandgap than that of silicon, it increases electron/hole injection and the enhances program/erase speeds. This study compares the characteristics of HfO2 nanocrystal memories with different oxynitride tunnel oxide thicknesses on Si and epi-SiGe substrate. Results show that the proposed nonvolatile memory possesses superior characteristics in terms of considerably large memory window for two-bits operation, high speed program/erase for low power applications, long retention time, excellent endurance, and strong immunity to disturbance. (C) 2012 Elsevier Ltd. All rights reserved.	en_US
dc.language.iso	en_US	en_US
dc.subject	Hafnium oxide	en_US
dc.subject	Nanocrystals	en_US
dc.subject	Nonvolatile memories	en_US
dc.subject	Flash memory	en_US
dc.subject	SiGe channel	en_US
dc.title	HfO2 nanocrystal memory on SiGe channel	en_US
dc.type	Article	en_US
dc.identifier.doi	10.1016/j.sse.2012.10.009	en_US
dc.identifier.journal	SOLID-STATE ELECTRONICS	en_US
dc.citation.volume	80	en_US
dc.citation.issue		en_US
dc.citation.spage	5	en_US
dc.citation.epage	9	en_US
dc.contributor.department	電子工程學系及電子研究所	zh_TW
dc.contributor.department	Department of Electronics Engineering and Institute of Electronics	en_US
dc.identifier.wosnumber	WOS:000315838000002	-
dc.citation.woscount	2	-
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