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dc.contributor.authorLin, Yu-Hsienen_US
dc.contributor.authorChien, Chao-Hsinen_US
dc.date.accessioned2014-12-08T15:29:54Z-
dc.date.available2014-12-08T15:29:54Z-
dc.date.issued2013-02-01en_US
dc.identifier.issn0038-1101en_US
dc.identifier.urihttp://dx.doi.org/10.1016/j.sse.2012.10.009en_US
dc.identifier.urihttp://hdl.handle.net/11536/21443-
dc.description.abstractThis study proposes a novel HfO2 nanocrystal memory on epi-SiGe (Ge: 15%) channel. Because SiGe has a smaller bandgap than that of silicon, it increases electron/hole injection and the enhances program/erase speeds. This study compares the characteristics of HfO2 nanocrystal memories with different oxynitride tunnel oxide thicknesses on Si and epi-SiGe substrate. Results show that the proposed nonvolatile memory possesses superior characteristics in terms of considerably large memory window for two-bits operation, high speed program/erase for low power applications, long retention time, excellent endurance, and strong immunity to disturbance. (C) 2012 Elsevier Ltd. All rights reserved.en_US
dc.language.isoen_USen_US
dc.subjectHafnium oxideen_US
dc.subjectNanocrystalsen_US
dc.subjectNonvolatile memoriesen_US
dc.subjectFlash memoryen_US
dc.subjectSiGe channelen_US
dc.titleHfO2 nanocrystal memory on SiGe channelen_US
dc.typeArticleen_US
dc.identifier.doi10.1016/j.sse.2012.10.009en_US
dc.identifier.journalSOLID-STATE ELECTRONICSen_US
dc.citation.volume80en_US
dc.citation.issueen_US
dc.citation.spage5en_US
dc.citation.epage9en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:000315838000002-
dc.citation.woscount2-
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