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dc.contributor.authorChang, Tien-Shunen_US
dc.contributor.authorLu, Tsung Yien_US
dc.contributor.authorChao, Tien-Shengen_US
dc.date.accessioned2014-12-08T15:30:21Z-
dc.date.available2014-12-08T15:30:21Z-
dc.date.issued2013-04-01en_US
dc.identifier.issn0741-3106en_US
dc.identifier.urihttp://dx.doi.org/10.1109/LED.2013.2247736en_US
dc.identifier.urihttp://hdl.handle.net/11536/21711-
dc.description.abstractThe impacts of zero-temperature-coefficient (ZTC) points of various strained devices is presented in this letter. The current and mobility are reduced at high temperature by phonon scattering. The degree of mobility reduction becomes severe on devices with multiple strain-gate engineering. The reduction of mobility becomes severe as a result of impurity scattering, which results from gate implantation impurities. The ZTC point is decreased by multiple strain-gate engineering due to the decreased Vth.en_US
dc.language.isoen_USen_US
dc.subjectMobilityen_US
dc.subjectnMOSFETsen_US
dc.subjectstrainen_US
dc.subjecttemperatureen_US
dc.subjectzero-temperature-coefficient (ZTC) pointen_US
dc.titleImpacts of Multiple Strain-Gate Engineering on a Zero-Temperature-Coefficient Pointen_US
dc.typeArticleen_US
dc.identifier.doi10.1109/LED.2013.2247736en_US
dc.identifier.journalIEEE ELECTRON DEVICE LETTERSen_US
dc.citation.volume34en_US
dc.citation.issue4en_US
dc.citation.spage481en_US
dc.citation.epage483en_US
dc.contributor.department交大名義發表zh_TW
dc.contributor.departmentNational Chiao Tung Universityen_US
dc.identifier.wosnumberWOS:000316813100002-
dc.citation.woscount1-
Appears in Collections:Articles


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