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dc.contributor.authorHsueh, Fu-Kuoen_US
dc.contributor.authorLee, Yao-Jenen_US
dc.contributor.authorLin, Kun-Linen_US
dc.contributor.authorCurrent, Michael I.en_US
dc.contributor.authorWu, Ching-Yien_US
dc.contributor.authorChao, Tien-Shengen_US
dc.date.accessioned2014-12-08T15:30:53Z-
dc.date.available2014-12-08T15:30:53Z-
dc.date.issued2011-07-01en_US
dc.identifier.issn0018-9383en_US
dc.identifier.urihttp://dx.doi.org/10.1109/TED.2011.2132801en_US
dc.identifier.urihttp://hdl.handle.net/11536/22054-
dc.description.abstractMicrowave annealing of dopants in Si has been reported to produce highly activated junctions at temperatures far below those needed for comparable results using conventional thermal processes. However, the details of the kinetics and mechanisms for microwave annealing are far from well understood. In this paper, 20-keV arsenic (As) and 15-keV phosphorus (P) implants, in a dose range from 1 to 5 x 10(15) ion/cm(2), were annealed by microwave methods at temperatures below 500 degrees.C. These junctions were characterized by profile studies with secondary ion mass spectrometry and spreading resistance profiling, sheet resistance with four-point probe, and extensive use of cross-sectional transmission electron microscopy to follow the regrowth of the as-implanted amorphous layers created by the implantation. The amorphous-layer regrowth was observed to be uneven in time, with relatively little amorphous/crystalline interface motion for less than 50 s, followed by rapid regrowth for longer times. Sheet resistance values continued to drop for anneal times after the regrowth process was complete, with some evidence of dopant deactivation for anneal times of 600 s.en_US
dc.language.isoen_USen_US
dc.subjectLow temperatureen_US
dc.subjectmicrowave annealingen_US
dc.subjectsolid-phase epitaxily growth (SPEG)en_US
dc.titleAmorphous-Layer Regrowth and Activation of P and As Implanted Si by Low-Temperature Microwave Annealingen_US
dc.typeArticleen_US
dc.identifier.doi10.1109/TED.2011.2132801en_US
dc.identifier.journalIEEE TRANSACTIONS ON ELECTRON DEVICESen_US
dc.citation.volume58en_US
dc.citation.issue7en_US
dc.citation.spage2088en_US
dc.citation.epage2093en_US
dc.contributor.department電子物理學系zh_TW
dc.contributor.departmentDepartment of Electrophysicsen_US
dc.identifier.wosnumberWOS:000291952900035-
dc.citation.woscount8-
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