標題: High performance IGZO/TiO2 thin film transistors using Y2O3 buffer layers on polycarbonate substrate
作者: Hsu, H. H.
Chang, C. Y.
Cheng, C. H.
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
公開日期: 1-Sep-2013
摘要: In this work, we fabricate IGZO TFT devices on flexible substrate at room temperature. The IGZO/TiO2 TFT has small subthreshold swing of 0.16 V/dec, but suffers large gate leakage and negative threshold voltage. However, the TiO2 TFT with Y2O3 buffer layers shows improved characteristics including a low threshold voltage of 0.55 V, a small sub-threshold swing of 0.175 V/decade and high field-effect mobility of 43 cm(2)/Vs. Such good performance can be attributed to the enhanced capacitance density and lowered gate leakage owing to the integration of large band gap Y2O3 and low-temperature higher-kappa TiO2.
URI: http://dx.doi.org/10.1007/s00339-013-7680-9
http://hdl.handle.net/11536/22097
ISSN: 0947-8396
DOI: 10.1007/s00339-013-7680-9
期刊: APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING
Volume: 112
Issue: 4
起始頁: 817
結束頁: 820
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