完整後設資料紀錄
DC 欄位 | 值 | 語言 |
---|---|---|
dc.contributor.author | Cho, Ta-Chun | en_US |
dc.contributor.author | Lu, Yu-Lun | en_US |
dc.contributor.author | Yao, Jie-Yi | en_US |
dc.contributor.author | Lee, Yao-Jen | en_US |
dc.contributor.author | Sekar, Karuppanan | en_US |
dc.contributor.author | Tokoro, Nobuhiro | en_US |
dc.contributor.author | Onoda, Hiroshi | en_US |
dc.contributor.author | Krull, Wade | en_US |
dc.contributor.author | Current, Michael I. | en_US |
dc.contributor.author | Chao, Tien-Sheng | en_US |
dc.date.accessioned | 2014-12-08T15:31:44Z | - |
dc.date.available | 2014-12-08T15:31:44Z | - |
dc.date.issued | 2013 | en_US |
dc.identifier.issn | 2162-8769 | en_US |
dc.identifier.uri | http://hdl.handle.net/11536/22449 | - |
dc.identifier.uri | http://dx.doi.org/10.1149/2.010307jss | en_US |
dc.description.abstract | Effects of low-temperature (approximate to 500 degrees C) microwave annealing (MWA) of Cluster-Carbon (C-7) and Phosphorus implants are compared with rapid thermal annealing (RTA) at 900 and 1000 degrees C for (100) and (110)-Si substrates. MWA annealing resulted in high levels of substitutional Carbon, 1.57% for (100) Si and 0.99% for (110) Si for C-7 implants. Addition of high-dose Phosphorus implants resulted in lower but still useful substitutional Carbon levels, 1.44% for (100) Si and 0.68% for (110) Si after MWA. RTA annealing at higher temperatures resulted in greatly reduced substitutional Carbon levels and deeper Phosphorus junctions. The effects of subsequent anneals by MWA and RTA methods are reported. MWA is shown to be a promising method for high-channel tensile strain in nMOSFETs with a substantially lower thermal budget than RTA. (C) 2013 The Electrochemical Society. All rights reserved. | en_US |
dc.language.iso | en_US | en_US |
dc.title | Microwave Annealing of Phosphorus and Cluster Carbon Implanted (100) and (110) Si | en_US |
dc.type | Article | en_US |
dc.identifier.doi | 10.1149/2.010307jss | en_US |
dc.identifier.journal | ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY | en_US |
dc.citation.volume | 2 | en_US |
dc.citation.issue | 7 | en_US |
dc.citation.spage | P293 | en_US |
dc.citation.epage | P298 | en_US |
dc.contributor.department | 電子物理學系 | zh_TW |
dc.contributor.department | Department of Electrophysics | en_US |
dc.identifier.wosnumber | WOS:000319459100002 | - |
dc.citation.woscount | 0 | - |
顯示於類別: | 期刊論文 |