標題: Demonstrating 1 nm-oxide-equivalent-thickness HfO2/InSb structure with unpinning Fermi level and low gate leakage current density
作者: Hai-Dang Trinh
Lin, Yueh-Chin
Minh-Thuy Nguyen
Hong-Quan Nguyen
Quoc-Van Duong
Quang-Ho Luc
Wang, Shin-Yuan
Manh-Nghia Nguyen
Chang, Edward Yi
材料科學與工程學系
電子工程學系及電子研究所
Department of Materials Science and Engineering
Department of Electronics Engineering and Institute of Electronics
公開日期: 30-Sep-2013
摘要: In this work, the band alignment, interface, and electrical characteristics of HfO2/InSb metaloxide-semiconductor structure have been investigated. By using x-ray photoelectron spectroscopy analysis, the conduction band offset of 1.78 +/- 0.1 eV and valence band offset of 3.35 +/- 0.1 eV have been extracted. The transmission electron microscopy analysis has shown that HfO2 layer would be a good diffusion barrier for InSb. As a result, 1 nm equivalent-oxide-thickness in the 4 nm HfO2/InSb structure has been demonstrated with unpinning Fermi level and low leakage current of 10(-4) A/cm(-2). The D-it value of smaller than 10(12) eV(-1) cm(-2) has been obtained using conduction method. (C) 2013 AIP Publishing LLC.
URI: http://dx.doi.org/10.1063/1.4823584
http://hdl.handle.net/11536/23017
ISSN: 0003-6951
DOI: 10.1063/1.4823584
期刊: APPLIED PHYSICS LETTERS
Volume: 103
Issue: 14
結束頁: 
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