標題: | Through-Silicon-Via Characterization and Modeling Using a Novel One-Port De-Embedding Technique |
作者: | Peng, An-Sam Cho, Ming-Hsiang Wang, Yueh-Hua Wang, Meng-Fang Chen, David Wu, Lin-Kun 電機工程學系 Department of Electrical and Computer Engineering |
關鍵字: | 3D IC;TSV;de-embedding;TEGs;microwave;RF modeling |
公開日期: | 1-Oct-2013 |
摘要: | In this paper, a novel and simple one-port de-embedding technique has been applied to through-silicon-via (TSV) characterization and modeling. This method utilized pad, via, and line structures to extract the equivalent circuit model of TSV. The main advantage of this de-embedding method is that it can reduce the chip area to fabricate test element groups (TEGs) for measurements while keeping S-parameter measurement accuracies. We also analyzed the electrical characteristics of substrate coupling and TSV equivalent impedance. Our results shows good agreements between measurement data and the equivalent circuit model up to 20 GHz. |
URI: | http://dx.doi.org/10.1587/transele.E96.C.1289 http://hdl.handle.net/11536/23316 |
ISSN: | 0916-8524 |
DOI: | 10.1587/transele.E96.C.1289 |
期刊: | IEICE TRANSACTIONS ON ELECTRONICS |
Volume: | E96C |
Issue: | 10 |
起始頁: | 1289 |
結束頁: | 1293 |
Appears in Collections: | Articles |
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